The characteristics and use of electronic delivery of nanoelectronic devices

For the quantum dot confinement system, the number of free electrons is reduced or even depleted under the applied bias, and at this time, a few electron system is formed. Due to the small number of electrons involved in transport in the system, the spin effect of the electron itself and the interaction between electrons should be considered when analyzing the transport properties. The separation of energy levels in the system also affects the transport properties of low-electron systems. For example, when an external magnetic field is applied, the energy levels split, so the occupation of electron levels changes with the magnetic field. The electron transport under different magnetic fields Is different. For single quantum dot devices, the interaction between the electrons on the quantum dots and the electronic coupling effect between the quantum dots and the poles should be considered; for the multiple quantum dot devices, the electronic coupling between the quantum dots needs to be further analyzed.

Nanoelectronic device model analysis, single quantum dot device model is a single quantum dot device schematic diagram and its equivalent circuit diagram. If the source-drain bias voltage is small enough and the gate voltage is applied so that the chemical potential LN on the quantum dot is between the double junction chemical potentials Ls and Ld, the conductance peak appears. Scanning the applied gate voltage, the conductance peak period appears. The excited state of the energy level enters the transport window. At this time, the transport electrons can occupy not only the ground state energy level but also the excited state energy level. The increase of the transport channel directly leads to the increase of the transport current. Dual quantum dot device model The dual quantum dot system is closely related to quantum computing. How to control the coupling between quantum dots and even the coupling between electron spins is of great significance to the realization of quantum computing.

In the double quantum dot model, the physical properties of the double quantum dots are different due to their different degrees of coupling. If it is strongly coupled, the electronic state is similar to the covalent energy band; and under weak coupling conditions, the electronic state is similar to the ionic energy band. In the dual quantum dot structure model shown, EC1 represents the charge energy on a single quantum dot, ECm represents the coupling energy between quantum dots, which is equivalent to the energy when a charge on a quantum dot tunnels to another quantum dot change. The dual quantum dot system must also meet the basic conditions of quantum tunneling: an applied bias voltage can provide enough energy to tunnel the charge through the junction barrier, and the junction barrier needs to be large enough to ensure that the non-transported charge can be limited to each quantum dot on. For the double quantum dot system, there is a resonance conductance when the electron tunnels through two series of quantum dots. This occurs when the three charge states are degenerate, that is, at the intersection of the three boundaries of the honeycomb-shaped region shown in the figure. .

The Kondo effect is a virtual exchange process. In the case of Coulomb blockage, electrons cannot be transported, but if the number of electrons on the quantum dot is an odd number, then there must be a single-spin state electron with unspin on the quantum dot, when its transition to the leak When the pole is in the empty state, electrons with opposite spin directions on the source can enter the quantum dot. The result of the whole process is that the electrons on the quantum dot and the electrons involved in the transport are reversed. Research progress and application of nanoelectronic devices With the improvement of technological level and the deepening of theoretical analysis, the research work of nanoelectronic devices has made considerable progress. 1998430 Solid State Electronics Research and Development The sensitivity of the RF single-electron transistor (RF-SET) proposed by integrated single-electron transistors and quantum superconducting interference devices is nearly two orders of magnitude higher than that of ordinary single-electron transistors; in the new work of JCBlakesley et al. The quantum dot tunneling diode effectively detected the monophonon.

When the device entered the field of nanoelectronics from the field of microelectronics, it encountered various problems, involving physical mechanism, technology and economy. In order to make nanoelectronic devices widely used, we must focus on solving the following points: first, the manufacturing process must be compatible with the silicon planar process; second, the size and number of quantum dots and the degree of coupling between quantum dots can be controlled; afterwards, the device must Able to work stably in room temperature environment. As for quantum computing, how to control the electronic transport to realize the transmission, processing and storage of quantum states, while avoiding the interference of the external environment to maintain the coherence between quantum states is the main problem currently facing. To fundamentally solve these problems, the key lies in the improvement of fine process technology and the full grasp of the physical mechanism of less electron transport.

Conclusion Through the discussion of single quantum dot and double quantum dot device models, the transport characteristics of few electrons in nanoelectronic devices are analyzed, especially the impact of energy level changes on quantum dots on transport when an external magnetic field is applied. The electronic transistor analyzes the principle of Kondo effect and the performance under different conditions, and summarizes the recent research progress in the application of nanoelectronic devices.

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