It is reported that China's Suzhou Nanotechnology and Nano-Bionics Institute has ordered two sets of Ai Siqiang's near-coupling sprinkler technology (CCS) system to expand the center's nitride semiconductor research. Ai Siqiang said that the order was received in the third quarter of 2012 and is scheduled to be delivered in the fourth quarter of 2012 and the first quarter of 2013.
One of them is the 2-inch technology development system introduced by Ai Siqiang, which can handle 6x2 inch substrates. Another CRIUS® system is used for batch production and can process substrates up to 31x2" or 3x6" in size.
Dr. Yang Hui, Director of the Nanotechnology and Nano-Bionics Institute in Suzhou, pointed out: "Our nanodevices and related materials research department will use these two systems to develop new applications, such as the development of gallium nitride (GaN) lasers and silicon based systems using a 2-inch system. Growth of gallium nitride and fabrication of high electron mobility transistors (HEMT) using the CRIUS® system."
The Nano Devices and Related Materials Research Division was established in 2006. One of the research groups specializes in high-power LEDs and laser diodes (LDs) based on GaN based 6x2" proximity coupled sprinkler systems. The department expects to apply professional technology development to the field of power electronics.
Currently, gallium nitride high electron mobility transistors grown on silicon substrates have been extensively developed for mass production of high power density devices for RF and power switching applications. Systems built with this device will be smaller and more energy efficient, require fewer circuitry and passive components, and reduce cooling requirements.
One of them is the 2-inch technology development system introduced by Ai Siqiang, which can handle 6x2 inch substrates. Another CRIUS® system is used for batch production and can process substrates up to 31x2" or 3x6" in size.
Dr. Yang Hui, Director of the Nanotechnology and Nano-Bionics Institute in Suzhou, pointed out: "Our nanodevices and related materials research department will use these two systems to develop new applications, such as the development of gallium nitride (GaN) lasers and silicon based systems using a 2-inch system. Growth of gallium nitride and fabrication of high electron mobility transistors (HEMT) using the CRIUS® system."
The Nano Devices and Related Materials Research Division was established in 2006. One of the research groups specializes in high-power LEDs and laser diodes (LDs) based on GaN based 6x2" proximity coupled sprinkler systems. The department expects to apply professional technology development to the field of power electronics.
Currently, gallium nitride high electron mobility transistors grown on silicon substrates have been extensively developed for mass production of high power density devices for RF and power switching applications. Systems built with this device will be smaller and more energy efficient, require fewer circuitry and passive components, and reduce cooling requirements.
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