The first Rose Street Laboratory in the United States confirmed the InGaN-on-Si long-wave LED device

[High-tech LED News] Recently, the American Rose Street Laboratory announced that the first one confirmed that silicon-based wafers can produce long-wave LED devices, which has a significant cost advantage over traditional sapphire or SiC substrates. Manufacturing green LEDs and long-wave nitride-based LEDs is challenging due to the decline in quantum efficiency compared to ultraviolet and blue LEDs.

FlipChip International LLC (FCI), a sister company of Rose Street Labs, will be responsible for the packaging of green LEDs and long-wave LEDs. FCL has extensive experience in packaging semiconductor power devices, and its worldwide manufacturing facilities will provide the lab with a dedicated LED device packaging solution.

The company said that InGaN-on-Si long-wave LEDs have the advantages of high strength, low power consumption and low commercial cost. It is expected that this technology can produce InGaN-on-Si on 200 mm silicon substrates in the next 2-3 years. LED equipment has broad business prospects. In addition, the Rose Street Laboratory has initially confirmed the ability to adjust the light to polychromatic and white light spectra.

It is reported that the Rose Street Laboratory in the United States is located in Phoenix, Arizona, is a product and service provider, privately owned, serving the renewable energy and semiconductor markets.

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