Relevant media learned from the Institute of Metal Research of the Chinese Academy of Sciences that researcher Ma Xiuliang's research team and collaborators found flux-closed domain structures in ferroelectric materials, or allowed ultra-high-density information storage for ferroelectric materials.
Ferroelectric materials refer to a class of materials whose electrodeposition direction can be changed under the action of an applied electric field, such as lead titanate or barium titanate. The ferroelectric memory has the advantages of low power consumption, fast reading and writing speed, long life and strong anti-irradiation ability, but it cannot achieve very small storage units, and it is difficult to achieve high-density storage.
Ma Xiuliang's research team proposed to overcome the spontaneous strain of ferroelectric materials and overcome the lattice distortion of ferroelectric materials by introducing external strain.
"Lattice distortion refers to the deformation of the crystal lattice." Ma Xiuliang said that the crystal is a solid with a clear diffraction pattern, and the space lattice in which the atoms are arranged in the crystal is called a crystal lattice.
Based on the above design ideas, the research team used pulsed laser deposition to prepare a series of different thicknesses of lead titanate ferroelectric multilayer films on silicate substrates, using aberration-corrected electron microscopy with atomic-scale resolution. Not only the flux-closed domain structure and its novel atomic configuration map were found, but also a large-scale periodic array consisting of alternating clockwise and counterclockwise closed structures was observed. On this basis, they revealed the formation of periodic closed structures.
Ye Hengqiang, a member of the Chinese Academy of Sciences, said: "The discovery of fully closed domain structures and related domain arrays in ferroelectric materials has demonstrated breakthroughs in the frontier areas in two respects. One is the flux-closed structure of multiferroic materials, which may bring high Density information storage function, and low storage energy consumption, is a potential way to solve the high energy consumption of ultra-high integration microelectronic chips. This closed structure experiment found that it is of great significance. The second is that this type of structure is used. The aberration-corrected electron microscopy of the sub-resolution capability is presented in an intuitive form, which opens up people's horizons and is a powerful means for scientists to understand the laws of nature."
Ferroelectric materials refer to a class of materials whose electrodeposition direction can be changed under the action of an applied electric field, such as lead titanate or barium titanate. The ferroelectric memory has the advantages of low power consumption, fast reading and writing speed, long life and strong anti-irradiation ability, but it cannot achieve very small storage units, and it is difficult to achieve high-density storage.
Ma Xiuliang's research team proposed to overcome the spontaneous strain of ferroelectric materials and overcome the lattice distortion of ferroelectric materials by introducing external strain.
"Lattice distortion refers to the deformation of the crystal lattice." Ma Xiuliang said that the crystal is a solid with a clear diffraction pattern, and the space lattice in which the atoms are arranged in the crystal is called a crystal lattice.
Based on the above design ideas, the research team used pulsed laser deposition to prepare a series of different thicknesses of lead titanate ferroelectric multilayer films on silicate substrates, using aberration-corrected electron microscopy with atomic-scale resolution. Not only the flux-closed domain structure and its novel atomic configuration map were found, but also a large-scale periodic array consisting of alternating clockwise and counterclockwise closed structures was observed. On this basis, they revealed the formation of periodic closed structures.
Ye Hengqiang, a member of the Chinese Academy of Sciences, said: "The discovery of fully closed domain structures and related domain arrays in ferroelectric materials has demonstrated breakthroughs in the frontier areas in two respects. One is the flux-closed structure of multiferroic materials, which may bring high Density information storage function, and low storage energy consumption, is a potential way to solve the high energy consumption of ultra-high integration microelectronic chips. This closed structure experiment found that it is of great significance. The second is that this type of structure is used. The aberration-corrected electron microscopy of the sub-resolution capability is presented in an intuitive form, which opens up people's horizons and is a powerful means for scientists to understand the laws of nature."
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