LED chip manufacturing process
In order to obtain high-power LED devices, it is necessary to prepare a suitable high-power LED panel light chip. The international community usually refers to the manufacturing methods of high-power LED chips as follows:
1 Increase the size of the light. A single LED illumination area and effectively increases the amount of current flowing through the uniform distribution layer TCL to achieve the desired flux. However, simply increasing the light-emitting area does not solve this problem, and the heat dissipation problem cannot achieve the desired effect and the magnetic flux in practical applications.
2 silicon floor flip method. Eutectic solder First, prepare a large LED panel light chip and prepare a suitable size on a silicon substrate and a silicon substrate, using a gold eutectic solder layer and a conductive layer conductor (ultrasonic gold wire ball joint) And an LED chip and a large-sized silicon substrate that are soldered together with the eutectic solder using the mobile device. This structure is more reasonable, not only to consider this issue, but also to consider the issue of light and heat, which is the mainstream high-power LED production. Lumileds, Inc. in the United States in 2001 developed a different flip-chip power supply for the AlGaInN (FCLED) structure, manufacturing process: the first P-type GaN epitaxial film deposited on the top layer thickness exceeds 500A, and the return reflection Niau The ohmic contact is then selectively etched, using a mask, in the P-type layer and the multiple quantum well active layer, exposing the N-type layer deposition, and forming the 1 mm x 1 mm side of the N-type ohmic contact layer 1 after etching P-type ohmic contact, N-type ohmic contact is inserted into the comb, the chip size, so that the current extended distance can be shortened to minimize the ESD protection diode (ESD) silicon chip supporting the diffusion resistance of indium gallium aluminum nitride Install the inverted solder bumps.
3 ceramic plate flip method. The general structure of the crystal structure of the LED panel light chip of the LED chip of the next large, eutectic solder layer and conductive layer on the ceramic plate and ceramic substrate, the corresponding leads produced in this area, the use of crystal LED in the welding electrode Soldering equipment for chip and large-size ceramic sheets. Such a structure is a problem to be considered, and it is also a problem to be considered. Light, heat, use of high thermal conductivity ceramic plates, ceramic plates, heat dissipation effect is very good, the price is relatively low, more suitable for the current basic packaging materials and space reserved for Future integration of integrated circuits.
4 sapphire substrate transition method. The manufacturer of the PN junction after removal of the sapphire substrate, the InGaN chip is grown on the sapphire substrate, and then the conventional quaternary material is connected to the lower electrode of the large-structured blue LED chip by a conventional method.
5AlGaInN method of silicon carbide (SiC) back light. Cree is the world's only manufacturer of AlGaInN ultra-high brightness LEDs for silicon carbide substrates. The architecture of AlGaInN / SICA chips produced over the years has been continuously improved and brightness has been increased. Since the P-type and N-type electrodes are respectively located at the top and bottom of the chip, using a single wire bond, better compatibility, and ease of use, it has become another mainstream product development of AlGaInNLED.
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